Position-controlled epitaxial III-V nanowires on silicon

被引：109
|
作者：
Roest, Aarnoud L.
Verheijen, Marcel A.
Wunnicke, Olaf
Serafin, Stacey
Wondergem, Harry
Bakkers, Erik P. A. M.
机构：
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 11期
关键词：
D O I：
10.1088/0957-4484/17/11/S07
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We show the epitaxial integration of III - V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal - organic vapour phase epitaxy. The hetero-epitaxial growth of the III - V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III - V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.
引用
收藏
页码：S271 / S275
页数：5
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