Can the dynamics and reactivity of Mu+ and Mu- in heavily doped n-type and p-type silicon be studied?

被引：1

作者：

Mansour, A. I. ^{[1
]}

Chow, K. H. ^{[1
]}

Salman, Z. ^{[2
,3
]}

Fan, I. ^{[1
]}

King, P. J. C. ^{[3
]}

Hitti, B. ^{[4
]}

Jung, J. ^{[1
]}

Cottrell, S. P. ^{[3
]}

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada

[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

[3] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England

[4] TRIUMF, Vancouver, BC V6T 2A3, Canada

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 5-7期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Hydrogen; Muonium; Site; Diffusion; Silicon; BOND-CENTERED MUONIUM; CRYSTALLINE SILICON; INTERSTITIAL ZINC; HYDROGEN; SEMICONDUCTORS; SI; ZNSE; GAN;

D O I：

10.1016/j.physb.2008.11.160

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the stability and dynamics of muonium centers in heavily doped p-type and n-type Si crystals. The measurements were conducted and were carried out at the ISIS facility in the United Kingdom. This allows us to detect weak dipolar interactions between the probe and its surrounding host nuclei. The Mu(+) center was successfully observed in the p-type Si:B sample, where its dipolar interaction with the Si-29 neighboring nuclei was detected. The stability, diffusivity and reactivity of this positive diamagnetic center were clearly identified. On the other hand, the neutral Mu(BC)(0) center appear to dominate the dynamics in the n-type Si:As sample due to its very rapid spin exchange rate (10(6) MHz), and thus it conceals the effect due to the Mu(-) center. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：831 / 833

页数：3

共 50 条

[1] Diffusion, trapping, and relaxation of Mu+ and Mu- in heavily‐doped GaAs
K.H. Chow
S.F.J. Cox
E.A. Davis
S.R. Dunsiger
T.L. Estle
B. Hitti
R.F. Kiefl
R.L. Lichti
Hyperfine Interactions, 1997, 105 : 309 - 314
[2] Diffusion, trapping, and relaxation of Mu+ and Mu- in heavily‐doped GaAs
Chow, K.H.
Cox, S.F.J.
Davis, E.A.
Dunsiger, S.R.
Estle, T.L.
Hitti, B.
Kiefl, R.F.
Lichti, R.L.
1997, Kluwer Academic Publishers (105): : 1 - 4
[3] DIFFUSION OF BORON IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
WILLOUGHBY, AFW
EVANS, AGR
CHAMP, P
YALLUP, KJ
GODFREY, DJ
DOWSETT, MG
JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2392 - 2397
[4] Diffusion, trapping, and relaxation of Mu+ and Mu- in heavily-doped GaAs
Chow, K. H.
Cox, S. F. J.
Davis, E. A.
Dunsiger, S. R.
Hyperfine Interactions, 105 (1-4):
[5] PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
WAGNER, J
PHYSICAL REVIEW B, 1984, 29 (04): : 2002 - 2009
[6] SELF-ENERGIES OF PHONONS IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
PINTSCHOVIUS, L
VERGES, JA
CARDONA, M
PHYSICAL REVIEW B, 1982, 26 (10): : 5658 - 5667
[7] EFFECT OF ENERGY-BAND DISTORTIONS ON D/MU IN HEAVILY DOPED N-TYPE SILICON
SHARMA, SK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) : 768 - 770
[8] REFLECTIVITY OF HEAVILY DOPED P-TYPE AND N-TYPE SILICON AT THE 3.4 EV AND 4.5 EV PEAK
BRAMER, BR
VERTOGEN, G
PENNING, P
SOLID STATE COMMUNICATIONS, 1963, 1 (06) : 138 - 143
[9] RELATIONSHIP BETWEEN RESISTIVITY AND TOTAL ARSENIC CONCENTRATION IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
FAIR, RB
WEBER, GR
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 280 - 282
[10] ELASTIC CONSTANTS OF HEAVILY DOPED N-TYPE SI AND P-TYPE GE
BEILIN, VM
VEKILOV, YK
KRASILNI.OM
SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (03): : 531 - +

← 1 2 3 4 5 →