Sensor photoresponse of thin-film oxides of zinc and titanium to oxygen gas
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Golego, N
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Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, CanadaUniv Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada
Golego, N
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Studenikin, SA
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Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, CanadaUniv Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada
Studenikin, SA
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Cocivera, M
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Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, CanadaUniv Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada
Cocivera, M
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[1] Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada
Response of steady-state photoconductivity to changes in oxygen partial pressure (10(-3) to 1 atm) has been quantitatively studied in thin-film polycrystalline TiO2:Nb and ZnO at 80-120 degrees C. The magnitude of photoconductivity varied as a square root of illumination intensity regardless of oxygen pressure. Both materials showed fast response to oxygen, although in different pressure ranges. Zinc oxide was more sensitive to lower oxygen pressures while titanium dioxide worked better at pressures close to 1 atm. (C) 2000 The Electrochemical Society. S0013-4651(99)07-1 19-0. All rights reserved.