Metal-organic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

被引：9

作者：

Mastro, M. A. ^{[1
]}

Holm, R. T. ^{[1
]}

Bassim, N. D. ^{[1
]}

Gaskill, D. K. ^{[1
]}

Culbertson, J. C. ^{[1
]}

Fatemi, M. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

Henry, R. L. ^{[1
]}

Twigg, M. E. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2006年 / 24卷 / 04期

关键词：

D O I：

10.1116/1.2172937

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by metal-organic chemical-vapor deposition on Si(111) substrates. A reflectance greater than 96% was demonstrated for an AlN/GaN DBR with a stop band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The, DBR structure was under significant strain due to growth on a mismatched substrate, although the GaN cap layer was shown to be strain-free.

引用

页码：1631 / 1634

页数：4

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