Selective area growth of GaAs and InGaAs on GaAs (111)B substrates by migration-enhanced epitaxy

Selective area growth of GaAs and InGaAs on GaAs (111)B substrates masked by SiO2 has been investigated by using migration-enhanced epitaxy (MEE). For the growth of GaAs, when the growth has been carried out by using MEE with 2 second annealing after Ga deposition, no polycrystalline GaAs is formed on the SiO2 mask and the surface of epitaxial layer grown in the stripe window region is very smooth. Furthermore, we have carried out selective growth of InGaAs on GaAs (111)B substrates masked by SiO2 at 590degreesC. In is continuously supplied during selective growth of InGaAs because of the very low sticking coefficient of In on the surface of epitaxial layer at 590degreesC. It is found that the grown layer thickness and the In fraction of InGaAs increase in narrower stripes due to the Ga and In atoms diffused from SiO2 mask. From these results, the distance of Ga and In surface diffusion are estimated to be 0.196mum and 0.89mum, respectively, at 590degreesC.