New results on high-field transport in semiconductor superlattices

被引：0
|
作者：
Holfeld, CP [1 ]
Rosam, B
Meinhold, D
Glutsch, S
Schäfer, W
Zhang, J
Glück, M
Korsch, HJ
Rossi, F
Köhler, K
Leo, K
机构：
[1] Tech Univ Dresden, Inst Angew Photophys, D-8027 Dresden, Germany
[2] Univ Jena, D-6900 Jena, Germany
[3] KFA Julich, Inst Schichten & Grenzflachen, D-5170 Julich, Germany
[4] Max Planck Inst Phys Komplexer Syst, Dresden, Germany
[5] Univ Kaiserslautern, D-67663 Kaiserslautern, Germany
[6] Politecn Torino, Dipartimento Fis, Turin, Italy
[7] Politecn Torino, INFM, Turin, Italy
[8] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS | 2003年 / 171卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The optical properties of an electrically biased semiconductor superlattice are strongly influenced by coupling to other bands. As these coupling mechanisms depend on the strength of the applied electric field, we find a distinct variation in transition line broadening, dephasing time and spatial extension of the wavefunction. The fundamental Bloch-oscillating transport in a periodic structure is drastically modified and exhibits a strong damping with a surprising revival of polarization coherence which reappears on a picosecond scale.
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页码：177 / 184
页数：8
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