Lattice-matched epitaxial Pb1-x Mn x Se/PbSe1-x S x heterojunctions

被引：0
|
作者：
Nuriyev, I. R. [1 ]
Nazarov, A. M. [1 ]
Sadygov, R. M. [1 ]
Hajiyev, M. B. [1 ]
机构：
[1] Azerbaijan Acad Sci, Academician Abdullaev Inst Phys, AZ-1143 Baku, Azerbaijan
来源：
INORGANIC MATERIALS | 2014年 / 50卷 / 05期
关键词：
Molecular beam epitaxy - Lead compounds;
D O I：
10.1134/S0020168514050136
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper examines the possibility of producing lattice-matched p-n heterojunctions based on epitaxial n-Pb1 - x Mn (x) Se (x = 0.02) and p-PbSe1 - x S (x) (x = 0.04) films. The heterojunctions have been grown by molecular beam epitaxy in a single processing cycle, without breaking the vacuum, using a compensating Se vapor source in the growth process. Optimal conditions have been found for the growth of structurally perfect (W (1/2) = 90aEuro(3)-100aEuro(3)) epitaxial films and fabrication of lattice-matched heterojunctions based on such films, photosensitive in the IR spectral region.
引用
收藏
页码：443 / 446
页数：4
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