ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

被引：18
|
作者：
Salauen, A. [1 ]
Veillerot, M. [1 ]
Pierre, F. [1 ]
Souchier, E. [1 ]
Jousseaume, V. [1 ]
机构：
[1] CEA, LETI, F-38054 Grenoble, France
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 03期
关键词：
DIELECTRIC-PROPERTIES; GRAIN-BOUNDARY; ZIRCONIUM; OXIDES; PRECURSORS; HFO2; CP2ZR(CH3)(2); CRYSTALLINE; TEMPERATURE;
D O I：
10.1149/2.012403jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we report the growth of ZrO2 thin films on TiN substrates using Plasma Enhanced Atomic Layer Deposition (PEALD) process starting from cyclopentadienyltris(dimetylamino)zirconium and oxygen plasma as precursor and reactant, respectively. The material properties - structure, morphology and composition - are investigated as a function of process parameters such as number of cycles, deposition temperature and plasma conditions. Electrical performances - in terms of breakdown field and leakage currents - are investigated as a function of deposition temperature on Au/ZrO2/TiN capacitors, giving an evidence for an impact of the crystallinity and impurities. (C) 2014 The Electrochemical Society.
引用
收藏
页码：N39 / N45
页数：7
相关论文
共 50 条
  • [1] Plasma enhanced atomic layer deposition of ZrO2 gate dielectric
    Koo, JY
    Han, JW
    Choi, SW
    Park, CG
    Kim, YD
    Jeon, HT
    SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, 2002, 716 : 67 - 72
  • [2] Plasma Enhanced Atomic Layer Deposition of ZrO2: A Thermodynamic Approach
    Blanquet, E.
    Monnier, D.
    Nuta, I.
    Volpi, F.
    Doisneau, B.
    Coindeau, S.
    Roy, J.
    Detlefs, B.
    Mi, Y.
    ZegenHagen, J.
    Martinet, C.
    Wyon, C.
    Gros-Jean, M.
    SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 2011, 35 (04): : 497 - 513
  • [3] Novel Zirconium Precursors for Atomic Layer Deposition of ZrO2 Films
    Chen, Tianniu
    Cameron, Thomas M.
    Nguyen, Shawn D.
    Stauf, Gregory T.
    Peters, David W.
    Maylott, Leah
    Li, Weimin
    Xu, Chongying
    Roeder, Jeffrey F.
    Hendrix, Bryan C.
    Hilgarth, Monica
    Niinisto, Jaakko
    Kukli, Kaupo
    Ritala, Mikko
    Leskela, Markku
    ATOMIC LAYER DEPOSITION APPLICATIONS 4, 2008, 16 (04): : 87 - +
  • [4] Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
    Cho, Gu Young
    Noh, Seungtak
    Lee, Yoon Ho
    Ji, Sanghoon
    Hong, Soon Wook
    Koo, Bongjun
    An, Jihwan
    Kim, Young-Beom
    Cha, Suk Won
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (01):
  • [5] Atomic layer deposition of ZrO2 thin films with high dielectric constant on TiN substrates
    Kim, Seong Keun
    Hwang, Cheol Seong
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (03) : G9 - G11
  • [6] The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition
    Lee, Baek-Ju
    Kim, Yoo-Seong
    Seo, Dong-Won
    Choi, Jae-Wook
    COATINGS, 2023, 13 (01)
  • [7] Pentacene-thin film transistors with ZrO2 gate dielectric layers deposited by plasma-enhanced atomic layer deposition
    Yun, Sun Jin
    Koo, Jae Bon
    Lim, Jung Wook
    Kim, Seong Hyun
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (03) : H90 - H93
  • [8] Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
    Lao, SX
    Martin, RM
    Chang, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (03): : 488 - 496
  • [9] Atomic layer deposition of ZrO2 thin films using dichlorobis [bis-(trimethylsilyl)amido] zirconium and water
    Nam, WH
    Rhee, SW
    CHEMICAL VAPOR DEPOSITION, 2004, 10 (04) : 201 - 205
  • [10] Atomic layer deposition of ZnO thin film on ZrO2 dental implant surface for enhanced antibacterial and bioactive performance
    Wang, Mingyuan
    Gao, Jiuyu
    MATERIALS LETTERS, 2021, 285
12345