Reduction of dislocations in a (11(2)over-bar2)GaN grown by selective MOVPE on (113)Si

被引：9

作者：

Tanikawa, T. ^{[1
]}

Kagohashi, Y.

Honda, Y.

Yamaguchi, M.

Sawaki, N.

机构：

[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; A-PLANE GAN; OVERGROWTH; SUBSTRATE;

D O I：

10.1016/j.jcrysgro.2009.01.109

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two-step selective epitaxy (SAG/ELO) of (11 (2) over bar2)GaN on (113)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (11 (2) over bar2)GaN template on a (113)Si and the second SAG/ELO is to get a uniform (11 (2) over bar2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3 x 10(7)/cm(2), which is two orders of magnitude lower than that found in a (0001)GaN grown on (111)Si. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2879 / 2882

页数：4

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