Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers

被引：23
|
作者：
Ohiso, Y [1 ]
Okamoto, H [1 ]
Iga, R [1 ]
Kishi, K [1 ]
Amano, C [1 ]
机构：
[1] NTT Corp, Ntt Photon Labs, Atsugi, Kanagawa 2430198, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 06期
关键词：
buried heterostructure; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs); wafer bonding;
D O I：
10.1109/LPT.2002.1003077
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report the single-mode operation of 1.55-mum buried heterostructure vertical-cavity surface-emitting lasers (VCSELs) fabricated on a GaAs-AlAs distributed Bragg reflector using thin-film wafer fusion. A 7-mum VCSEL exhibits a single transverse mode at up to about 0.1-mW maximum optical output power and 75 degreesC maximum operation temperature under continuous-wave operation.
引用
收藏
页码：738 / 740
页数：3
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