Optical and structural properties of GaAs/GaInP quantum wells grown by chemical beam epitaxy

被引：4
|
作者：
Martins, MR
Oliveira, JBB
Tabata, A
Laureto, E
Bettini, J
Meneses, EA
Carvalho, MMG
机构：
[1] UNESP, Dept Fis, Sao Paulo, Brazil
[2] UNICAMP, Inst Fis Gleb Wathagin, Sao Paulo, Brazil
[3] LNLS, Lab Nacl Luz Sincroton, Sao Paulo, Brazil
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2004年 / 34卷 / 2B期
关键词：
D O I：
10.1590/S0103-97332004000400022
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (CW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van De Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xInxAs1-yPy.
引用
收藏
页码：620 / 622
页数：3
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