Quantum transport modeling in anisotropic semiconductors using Wigner function formulation

被引:0
|
作者
Kim, KY [1 ]
Lee, B [1 ]
机构
[1] Seoul Natl Univ, Sch Elect Engn, Kwanak Gu, Seoul 151742, South Korea
来源
关键词
D O I
10.1109/COMMAD.2000.1022925
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Wigner transport equation is formulated in anisotropic semiconductor quantum wells. Especially, we suggest a formulation in which we can use the conventional Wigner transport equation solvers developed assuming isotropic materials for the actual numerical calculation. The three-dimensional Wigner function involving effective mass tensor can be reduced into one-dimensional form which involves only one diagonal effective mass tensor element and the original three-dimensional Wigner function is given as the convolution of the one-dimensionally reduced Wigner function with a newly defined function related to the off-diagonal effective mass tensor elements.
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页码:198 / 201
页数:4
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