Comments on "Ill conditioning in self-heating FET models"

被引:2
|
作者
Parker, AE
机构
[1] Department of Electronics, Macquarie University, Sydney, NSW
关键词
circuit simulation; microwave FETs;
D O I
10.1109/LMWC.2002.803141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A recent letter(1) reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.
引用
收藏
页码:351 / 352
页数:2
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