Investigation of Self-heating and Thermal Network for Complementary FET

被引：2

作者：

Zhao, Songhan ^{[1
]}

Cai, Linlin ^{[1
]}

Chen, Wangyong ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Du, Gang ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2021 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2021年

关键词：

D O I：

10.1109/SNW51795.2021.00026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work investigates the thermal characteristics and thermal reliability of the vertical complementary FET (CFET). As a candidate for 5nm nodes, CFET device suffers severer self-heating and thermal crosstalk than lateral standard CMOS device. A thermal network model is proposed for CFET to rapidly evaluate the temperature variation under AC operating conditions, and the results can be used for preliminary lifetime prediction of thermal-related reliability.

引用

页码：49 / 50

页数：2

共 50 条

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