Sintering behavior and microwave dielectric properties of CaMgSi2O6 ceramics with Al2O3 addition

被引:24
|
作者
Wang, Huanping [1 ]
Li, Denghao [1 ]
Yang, Qinghua [1 ]
Lei, Ruoshan [1 ]
Ma, Hongping [2 ]
Xu, Shiqing [1 ]
机构
[1] China Jiliang Univ, Coll Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R China
[2] Zhejiang Univ Sci & Technol, Sch Mech & Automot Engn, Hangzhou 310012, Zhejiang, Peoples R China
关键词
Ceramics; Oxides; Dielectric properties; Microstructure; LOW-PERMITTIVITY; LTCC APPLICATIONS; TEMPERATURE; SYSTEM; MICROSTRUCTURE;
D O I
10.1016/j.materresbull.2014.03.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of Al2O3 content on the densification, phase compositions, microstructure and microwave dielectric properties of CaMgSi2O6-Al2O3 ceramics were investigated. The Al2O3 addition in CaMgSi2O6 ceramics resulted in the presence of a new phase, e.g. Ca(Mg,Al)(Si,Al)(2)O-6, and caused the emergence of Ca vacancies and O vacancies. The solubility limit of Al2O3 in Ca(Mg,Al)(Si,Al)(2)O-6 was found to be 4-8 wt%, and second phases of CaAl2Si2O8 and (Mg,Al)(8)(Si,Al)(6)O-20 were observed when the Al2O3 addition exceeded 8 wt%. Appropriate Al2O3 addition promoted the sintering process and lowered the densification temperature due to the vacancies defects caused by the Al3+ substitution for Mg2+ and Si4+ and the liquid phase originated from the second phases. Typically, good microwave dielectric properties of epsilon(r) = 7.99, Q x f = 60,132 GHz and tau(f)=-48.21 ppm/degrees C were obtained when the Al2O3 addition was 12 wt% and the as-prepared composite ceramic was sintered at 1250 degrees C. Crown Copyright (C) 2014 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:66 / 72
页数:7
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