Effects of Al2O3 addition on the sintering behavior and microwave dielectric properties of CaSiO3 ceramics

被引:39
|
作者
Wang, Huanping [1 ]
Chen, Jinmin [1 ]
Yang, Wenyi [1 ]
Feng, Siqiao [1 ]
Ma, Hongping [2 ]
Jia, Guohua [1 ]
Xu, Shiqing [1 ]
机构
[1] China Jiliang Univ, Coll Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R China
[2] Zhejiang Univ Sci & Technol, Sch Mech & Automot Engn, Hangzhou 310012, Zhejiang, Peoples R China
关键词
Sintering; Electron microscopy; Dielectric properties; CaSiO3; ceramic; Al2O3; addition; SOL-GEL PROCESS; LOW-TEMPERATURE; (CA1-XMGX)SIO3; SYSTEM;
D O I
10.1016/j.jeurceramsoc.2011.09.014
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effects of Al2O3 addition on the densification, structure and microwave dielectric properties of CaSiO3 ceramics have been investigated. The Al2O3 addition results in the presence of two distinct phases, e.g. Ca2Al2SiO7 and CaAl2Si2O8, which can restrict the growth of CaSiO3 grains by surrounding their boundaries and also improve the bulk density of CaSiO3 Al2O3 ceramics. However, excessive addition (>2 wt%) of Al2O3 undermines the microwave dielectric properties of the title ceramics since the derived phases of Ca2Al2SiO7 and CaAl2Si2O8 have poor quality factor. The optimum amount of Al2O3 addition is found to be 1 wt%, and the derived CaSiO3 Al2O3 ceramic sintered at 1250 degrees C presents improved microwave dielectric properties of epsilon(r) = 6.66 and Q x f = 24,626 GHz, which is much better than those of pure CaSiO3 ceramic sintered at 1340 degrees C (Q x f = 13,109 GHz). Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:541 / 545
页数:5
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