Nature of the band gap in Zn1-xBexSe alloys

被引：49
|
作者：
Chauvet, C [1 ]
Tournié, E [1 ]
Faurie, JP [1 ]
机构：
[1] CNRS, CRHEA, F-06560 Valbonne, France
来源：
PHYSICAL REVIEW B | 2000年 / 61卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.61.5332
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated by low-temperature photoluminescence and reflectivity spectroscopies a series of Zn1-xBexSe alloys with x up to 0.70. This allows us to locate precisely the direct-to-indirect band-gap crossover at x = 0.46+/-0.01. We demonstrate that above this composition the indirect band gap corresponds to a Gamma-->X transition. By extrapolation we determine the Gamma-->X band gap of BeSe at 3.75+/-0.1 eV. Finally, we find a bowing parameter b = 0.97 eV for the Gamma-->Gamma direct band gap in the whole composition range. For x less than or equal to 0.60, this band gap increases linearly with the Be content at a rate of 23 meV/% Be.
引用
收藏
页码：5332 / 5336
页数：5
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