A Low Noise CMOS Low Dropout Regulator with an Area-Efficient Bandgap Reference

被引：0

作者：

Han, Sangwon ^{[1
]}

Kim, Jongsik ^{[1
]}

Won, Kwang-Ho ^{[2
]}

Shin, Hyunchol ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Radio Sci & Engn, Seoul 139701, South Korea

[2] Korea Elect Technol Inst, Songnam, South Korea

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2009年 / E92C卷 / 05期

关键词：

low dropout regulator (LDO); bandgap reference; CMOS;

D O I：

10.1587/transele.E92.C.740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In a low dropout (LDO) linear regulator whose reference voltage is supplied by a bandgap reference, double stacked diodes increase the effective junction area ratio in the bandgap reference, which significantly lowers the output spectral noise of the LDO. A low noise LDO with the area-efficient bandgap reference is implemented in 0.18 mu m CMOS. An effective diode area ratio of 105 is obtained while the actual silicon area is saved by a factor of 4.77. As a result, a remarkably low output noise of 186 nV/sqrt(Hz) is achieved at 1 kHz. Moreover, the dropout voltage, line regulation, and load regulation of the LIDO are measured to be 0.3 V. 0.04%/V, and 0.46%, respectively.

引用

页码：740 / 742

页数：3

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