Mechanical and tribological properties of 100-nm thick alumina films prepared by atomic layer deposition on Si(100) substrates

被引:3
|
作者
Alamgir, Asad [1 ]
Bogatov, Andrei [1 ]
Yashin, Maxim [1 ]
Podgursky, Vitali [1 ]
机构
[1] Tallinn Univ Technol, Dept Mech & Ind Engn, Ehitajate Tee 5, EE-19086 Tallinn, Estonia
关键词
nanoindentation; alumina oxide thin films; atomic layer deposition; nano-scratch; deformation; DIAMOND; FRICTION; MODULUS;
D O I
10.3176/proc.2019.2.01
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The study investigates mechanical and tribological properties of alumina (Al2O3) films prepared on Si(100) substrates. The 100-nm thick films were deposited by atomic layer deposition. Nanoindentation and nano-scratch tests were performed with Berkovich and sphero-conical diamond indenters, respectively. Energy-dispersive X-ray spectroscopy and optical and scanning electron microscopy were used to analyse the surface morphology and chemical composition of the thin films. X-ray diffraction was used to characterize their crystal structure. Crystallization was found to start at 1100 degrees C after 3 hours of annealing. The hardness and tribological properties of the alumina films were influenced by the substrate in nanoindentation and nano-scratch tests. Within the relatively low load range (5-50 mN), the coefficient of friction of Si and alumina against diamond depended on the load, most likely due to a change in the elastic/plastic deformation behaviour within the Si substrate.
引用
收藏
页码:126 / 130
页数:5
相关论文
共 50 条
  • [31] Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)
    Lamagna, L.
    Scarel, G.
    Fanciulli, M.
    Pavia, G.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (03): : 443 - 448
  • [32] Mechanical and tribological properties of (AlCoCrNiSi)100-xNx thin films
    Liang, Tongyue
    Alidokht, Sima A.
    Chromik, Richard R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (01):
  • [33] Structural, magnetic and electrical properties of nickelthin films deposited on Si (100) substrates by pulsed laser deposition
    Rizwan, M. N.
    Bell, C.
    Kalyar, M. A.
    Makhdoom, A. R.
    Ul Haq, A.
    Gilory, E.
    JOURNAL OF OVONIC RESEARCH, 2021, 17 (03): : 225 - 230
  • [34] Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique
    Shumpei Ogawa
    Tatsuya Kuroda
    Ryuga Koike
    Hiroki Ishizaki
    MRS Advances, 2018, 3 (3) : 165 - 170
  • [35] Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique
    Ogawa, Shumpei
    Kuroda, Tatsuya
    Koike, Ryuga
    Ishizaki, Hiroki
    MRS ADVANCES, 2018, 3 (03): : 165 - 170
  • [36] Material properties of electroless 100-200 nm thick CoWP films
    Shacham-Diamand, Y
    Sverdlov, Y
    Petrov, N
    Zhou, L
    Croitoru, N
    Inberg, A
    Gileadi, E
    Kohn, A
    Eizenberg, M
    ELECTROCHEMICAL TECHNOLOGY APPLICATIONS IN ELECTRONICS III, 2000, 99 (34): : 102 - 110
  • [37] Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates
    King, Mariah J.
    Theofanis, Patrick L.
    Lemaire, Paul C.
    Santiso, Erik E.
    Parsons, Gregory N.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (06):
  • [38] Influence of Si(100) surface pretreatment on the morphology of TiO2 films grown by atomic layer deposition
    Finnie, KS
    Triani, G
    Short, KT
    Mitchell, DRG
    Attard, DJ
    Bartlett, JR
    Barbé, CJ
    THIN SOLID FILMS, 2003, 440 (1-2) : 109 - 116
  • [39] Deposition sequences for atomic layer growth of AIN thin films on Si(100) using dimethylethylamine alane and ammonia
    Kuo, JS
    Rogers, JW
    NITRIDE SEMICONDUCTORS, 1998, 482 : 33 - 38
  • [40] Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors
    Lu, H. L.
    Scarel, G.
    Wiemer, C.
    Perego, M.
    Spiga, S.
    Fanciulli, M.
    Pavia, G.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (10) : H807 - H811