Defects printability and specification of ArF mask in repeating feature

As ArF process will be substituted for KrF process at below 0.13um node, it is time to study CD budget of mask error in ArF lithography. The purpose of this study is to investigate printability of ArF mask defects and corresponding effective specification in repeating cell. Mask defects in regularly repeated pattern were classified as point defect, line defect, and area defect, for convenience's sake, according to their sizes and lithographic explanations. Based on such classification, test reticle(ArF attenuated PSM) was manufactured in our captive mask shop. After exposed at a nominal dose and e-beam cured, each defect was inspected to extract effective specification for ArF process. MNPD(maximum nonprintable defect) sizes of various duty patterns were manifested in point defect. In line defect and area defect, as the base pattern CD and duty ratio changed, the slope(MEF) of linear fitting was obtained. Maximum CD deviation from mean CD could be calculated from it. Mask CD budget was considered as 50% of total wafer CD error(10% of target) for mask spec generation, Experimental result was compared with DAIM(diffused aerial image model)-based simulation result because experiment had the error that arose from e-beam curing.