Brush electrodeposited CdSexTe1-x thin films and their properties

被引：24
|
作者：
Murali, K. R. [1 ]
Jayasuthaa, B.
机构：
[1] Cent Electrochem Res Inst, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
来源：
SOLAR ENERGY | 2009年 / 83卷 / 06期
关键词：
Semiconductor; II-VI; Electronic material; Thin films; ELECTRICAL-PROPERTIES; DEPOSITION; TEMPERATURE;
D O I：
10.1016/j.solener.2008.12.014
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
CdSexTe1-x thin films were brush plated on titanium and conducting glass substrates from the precursors at different substrate temperatures in the range of 30-80 degrees C. X-ray diffraction studies indicated the films to possess hexagonal structure irrespective of composition. The strain and dislocation density decrease with increase of substrate temperature. The crystallite size increased from 30 to 100 nm as the substrate temperature increased. The resistivity of the films decreased with increase of substrate temperature. The carrier density and mobility increased with substrate temperature. Optical band gap of the films varied in the range of 1.45-1.72 eV. Higher photosensitivity was obtained compared to earlier reports. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：891 / 895
页数：5
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