Method to Predict Lifetime of IGBT under Power Cycling based-on Fast Electro-Thermo-Mechanical Model

Discrete insulated gate bipolar transistor (IGBT) is one of most important and fragile components in power system. Its lifetime profile is usually described as periodic temperature swing caused by power dissipation and environmental change. Since the reliability issue, especially lifetime assessment, is an effective method to evaluate the reliability of component and system, an effective model should be established to predict the lifetime under power cycling condition. In this paper, a fast coupling model is established by a novel method). An electro-thermal model is established in Simulink by Fourier-based solution. In COMSOL multi-physics simulation platform, a thermo- mechanical model for discrete package is established and the thermal and mechanical character can be obtained by finite element method. The fast electro-thermo-mechanical Model established in this paper can be used in lifetime prediction of discrete FS IGBT.