Towards a fast electro-thermo-mechanical IGBT/Diode simulation framework for design of reliable power electronic converters

被引:0
|
作者
Aristidou, P. [1 ]
Palmer, P. R. [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
关键词
Reliability; thermal cycling; electro-thermal device modelling; RELIABILITY; IGBT; DEVICES; MODELS; DIODE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a methodology that enables fast and reasonably accurate prediction of the reliability of power electronic modules featuring IGBTs and p-i-n diodes, by taking into account thermo-mechanical failure mechanisms of the devices and their associated packaging. In brief, the proposed simulation framework performs two main tasks which are tightly linked together: (i) the generation of the power devices' transient thermal response for realistic long load cycles and (ii) the prediction of the power modules' lifetime based on the obtained temperature profiles. In doing so the first task employs compact, physics-based device models, power losses lookup tables and polynomials and combined material-failure and thermal modelling, while the second task uses advanced reliability tests for failure mode and time-to-failure estimation. The proposed technique is intended to be utilised as a design/optimisation tool for reliable power electronic converters, since it allows easy and fast investigation of the effects that changes in circuit topology or devices' characteristics and packaging have on the reliability of the employed power electronic modules.
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页数:8
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