Reliability improvement of bulk-heterojunction organic solar cell by using reduced graphene oxide as hole-transport layer

被引：6
|
作者：
Nhu Thuy Ho [1 ,2 ]
Senthilkumar, V. [1 ,2 ]
Cho, Hak-Soon [1 ,2 ]
Nho, Sung Ho [1 ,2 ]
Cho, Shinuk [1 ,2 ]
Jung, M. -C. [3 ]
Qi, Y. B. [3 ]
Kim, Yong Soo [1 ,2 ,4 ]
机构：
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South Korea
[3] Grad Univ, Okinawa Inst Sci & Technol, Energy Mat & Surface Sci Unit, Onna, Okinawa 9040495, Japan
[4] SUNY Binghamton, Dept Phys Appl Phys & Astron, Binghamton, NY 13902 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
bulk-heterojunction solar cells; hole-transport layers; impedance spectroscopy; organic solar cells; reduced graphene oxide; SOLUTION-PROCESSABLE GRAPHENE; POLYMER PHOTOVOLTAIC CELLS; TRANSPARENT; PERFORMANCE; EFFICIENT;
D O I：
10.1002/pssa.201330611
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This work covered the application of thermally reduced graphene oxide (rGO) as a hole-transport layer (HTL) to enhance stability of normal P3HT:PCBM-based bulk-heterojunction solar device. This device showed approximately the same performance of device using PEDOT:PSS as HTL (3.14%). After 3 days, exposure of an unsealed device in 1 sun illumination, rGO device resulted in 67% degradation of performance, whereas samples fabricated with PEDOT:PSS or without HTL degraded to more than 88% in efficiency. By simulation into an equivalent circuit, impedance analysis demonstrated that this degradation was strongly depended on the buffer materials. The use of the thermally rGO as buffer material could reduce the change of resistance in both HTL and bulk layer as well as avoid the accumulation of space charges in the active film. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1873 / 1876
页数：4
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