Electrospinning preparation of p-type NiO/n-type CeO2 heterojunctions with enhanced photocatalytic activity

被引:35
|
作者
Yang, Zheng-Mei [1 ]
Hou, Su-Cheng [1 ]
Huang, Gui-Fang [1 ]
Duan, Hui-Gao [1 ]
Huang, Wei-Qing [1 ]
机构
[1] Hunan Univ, Dept Appl Phys, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
Heterostructures; Semiconductors; Nanocomposites; Nanofibers; Electrospinning; Photocatalytic activity; FABRICATION; NANOFIBERS;
D O I
10.1016/j.matlet.2014.06.169
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Novel p-type NiO/n-type CeO2 heterojunctions, with cubic NiO particles embedded on the CeO2 nanofibers, were successfully prepared by the electrospinning technique. The photocatalytic activity for MB degradation under UV light irradiation of the NiO/CeO2 heterojunction is much higher than, that of pure NiO or CeO2. The rate constant of MB degradation by NiO/CeO2 is about 4 times and 2 times than those of pure NiO and CeO2 under UV light irradiation, respectively. The excellent photocatalytic activity of the NiO/CeO2 heterostructures is closely related to the fast transfer and efficient separation of electron-hole pairs between NiO and CeO2 due to the formation of the heterojunction and their matching band positions. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:109 / 112
页数:4
相关论文
共 50 条
  • [21] Properties of hetero-structured diode with n-type ZnO and p-type NiO
    Jee, Seung Hyun
    Park, Hoon
    Kim, Soo Ho
    Lee, Joo Won
    Yoon, Young Soo
    Kang, Chi Won
    Kim, Dong-Joo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (01) : 446 - 450
  • [22] Engineering n-Type and p-Type BiOI Nanosheets: Influence of Mannitol on Semiconductor Behavior and Photocatalytic Activity
    Yang, Shuo
    Li, Wenhui
    Li, Kaiyue
    Huang, Ping
    Zhuo, Yuquan
    Liu, Keyan
    Yang, Ziwen
    Han, Donglai
    NANOMATERIALS, 2024, 14 (24)
  • [23] Near-Infrared Photodetection in n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions
    Promros, Nathaporn
    Chen, Li
    Yoshitake, Tsuyoshi
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (05) : 3577 - 3581
  • [24] Facile synthesis of p-type Cu2O/n-type ZnO nano-heterojunctions with novel photoluminescence properties, enhanced field emission and photocatalytic activities
    Wang, Yang
    Li, Shouchuan
    Shi, Hui
    Yu, Ke
    NANOSCALE, 2012, 4 (24) : 7817 - 7824
  • [25] BARRIERS ON N-TYPE AND P-TYPE GERMANIUM
    RAHIMI, S
    HENISCH, HK
    APPLIED PHYSICS LETTERS, 1981, 38 (11) : 896 - 897
  • [26] Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures
    Goto, Masaki
    Amano, Ryo
    Shimoda, Naotaka
    Kato, Yoshimine
    Teii, Kungen
    APPLIED PHYSICS LETTERS, 2014, 104 (15)
  • [27] Electrical characterization of n-type a-SiGe:H/p-type crystalline-silicon heterojunctions
    Rosales-Quintero, P
    Torres-Jacome, A
    Murphy-Arteaga, R
    Landa-Vázquez, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 366 - 372
  • [28] Polyaniline supported CdS/CeO2/Ag3PO4 nanocomposite: An "A-B" type tandem n-n heterojunctions with enhanced photocatalytic activity
    Taddesse, Abi M.
    Bekele, Tigabu
    Diaz, Isabel
    Adgo, Abebaw
    JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 2021, 406
  • [29] Diode Parameters of Heterojunctions Comprising p-Type Ultrananocrystalline Diamond Films and n-Type Si Substrates
    Chaleawpong, Rawiwan
    Promros, Nathaporn
    Charoenyuenyao, Peerasil
    Hanada, Takanori
    Ohmagari, Shinya
    Zkria, Abdelrahman
    Yoshitake, Tsuyoshi
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (03) : 1567 - 1573
  • [30] ACCEPTOR ACTIVITY OF COPPER IN N-TYPE AND P-TYPE GERMANIUM OF DIFFERENT RESISTIVITY
    VANDERMAESEN, F
    BRENKMAN, JA
    PHYSICA, 1954, 20 (11): : 1005 - 1007