Temperature-dependent AC conductivity and dielectric and impedance properties of ternary In-Te-Se nanocomposite thin films

被引:37
|
作者
Mannu, Pandian [1 ]
Palanisamy, Matheswaran [1 ]
Bangaru, Gokul [1 ]
Ramakrishnan, Sathyamoorthy [1 ]
Kandasami, Asokan [2 ]
Kumar, Pawan [3 ]
机构
[1] Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
[2] Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, India
[3] Govt Coll, Dept Phys, Bhiwani 127021, Haryana, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2019年 / 125卷 / 07期
关键词
OPTICAL-PROPERTIES; ALUMINUM-OXIDE; RELAXATION; SPECTROSCOPY; MECHANISMS; HETEROJUNCTION; CAPACITANCE; MODULUS; ZN; CD;
D O I
10.1007/s00339-019-2751-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The temperature- and frequency-dependent AC conductivity and dielectric and impedance properties of thermally evaporated ternary In-Te-Se nanocomposite thin films were measured in the temperature range from 100 to 300K with the frequency range of 20kHz-2MHz. The measured dielectric constant (epsilon), loss tangent (tan), and the ac electrical conductivity (sigma(ac)) values are considerably sensitive to the frequency and temperature. The variations in epsilon, epsilon and tan characteristics confirm the interfacial polarization. The values of C and epsilon decrease with frequency, while sigma(ac) increases with both temperature and frequency. The estimated activation energy is found to decrease with increase in temperature. Further, the frequency dependence real (Z) and imaginary parts (Z) of the impedance spectra of the sample depend on the dielectric relaxation process. The Nyquist plot shows that the radius of the semicircular arc decreases with temperature and reveals a temperature-dependent relaxation process. The mechanism responsible for thermally assisted AC conduction can be due to the electronic hopping of charge carriers.
引用
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页数:13
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