Ionic Field Effect Transistors with Sub-10 nm Multiple Nanopores

被引：248

作者：

Nam, Sung-Wook ^{[1
]}

Rooks, Michael J. ^{[2
]}

Kim, Ki-Bum ^{[1
]}

Rossnagel, Stephen M. ^{[2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 05期

关键词：

ATOMIC LAYER DEPOSITION; ALUMINA TUBULAR MEMBRANES; DNA TRANSLOCATION; PORE REDUCTION; TRANSPORT; FABRICATION; MOLECULES;

D O I：

10.1021/nl900309s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a new method to fabricate electrode-embedded multiple nanopore structures with sub-10 nm diameter, which is designed for electrofluidic applications such as ionic field effect transistors. Our method involves patterning pore structures on membranes using e-beam lithography and shrinking the pore diameter by a self-limiting atomic layer deposition process. We demonstrate that 70-80 nm diameter pores can be shrunk down to sub-10 nm diameter and that the ionic transport of KCl electrolyte can be efficiently manipulated by the embedded electrode within the membrane.

引用

页码：2044 / 2048

页数：5

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