Many-body and strain effects on the ground-state energy for a quasi-two-dimensional quantum wells with strain

被引:0
|
作者
Kim, MR [1 ]
Kim, SK [1 ]
Shin, DH [1 ]
Son, MS [1 ]
Rhee, JK [1 ]
机构
[1] Dongguk Univ, Millimeter Wave Innovat Technol Res Ctr, Seoul 100715, South Korea
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We discuss the many-body and the strain effects on the ground-state energy of semiconductor quantum wells with strain, considering the complexities related to the valence-band mixing for the hole. The exchange interaction and the screening of the Coulomb correlation depending on the strain and the sheet density are evaluated within the random-phase approximation. Such evaluation takes into account a 4 x 4 Luttinger-Kohn Hamiltonian, which leads to obtaining the valence band structure. The dependence of the ground-state energy on the strain and the sheet density are shown to become important as the dynamic correction of the Coulomb correlation is included.
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页码:330 / 333
页数:4
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