Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers

被引：56
|
作者：
Romero, B [1 ]
Arias, J [1 ]
Esquivias, I [1 ]
Cada, M [1 ]
机构：
[1] Univ Politecn Madrid, ETSI Telecommun, Dept Tecnol Foton, Ciudad Univ, E-28040 Madrid, Spain
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期
关键词：
D O I：
10.1063/1.126077
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a simple model for the carrier capture and escape processes in quantum-well (QW) lasers, which yields an analytical expression for the ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling effect. It also shows an exponential dependence of the escape time on the effective barrier height and on the inverse of the temperature. A comparison between experimental and calculated values for InGaAs/GaAs QW lasers is presented showing a good agreement. (C) 2000 American Institute of Physics. [S0003-6951(00)02412-8].
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页码：1504 / 1506
页数：3
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