Photoinduced changes in the local structure of a-GeSe2 by in situ EXAFS

被引：0

作者：

Ganjoo, Ashtosh ^{[1
]}

Chen, Gang ^{[1
]}

Jain, Himanshu ^{[1
]}

机构：

[1] Lehigh Univ, Ctr Opt Technol, Bethlehem, PA 18015 USA

来源：

PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B | 2006年 / 47卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In-situ extended x-ray absorption fine structure (EXAFS) analysis at the Ge and Se k-edges has been used to study the changes in the local atomic structure induced by bandgap and super bandgap illumination in normally and obliquely deposited a-GeSe2 films. The results obtained before, during and after illumination show that both the transient and metastable changes are induced by illumination, the magnitude depending on the photon energy and also the deposition conditions. A contraction is observed at both the Se and the Ge nearest neighbour distances.

引用

页码：177 / 181

页数：5

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