A low-power optoelectronic memory device based on MoS2/BN/graphene heterostructure

被引：0
|
作者：
Jiang, Hongzhu [1 ]
Qin, Shuchao [1 ]
Wang, Anran [1 ]
Wang, Fengqiu [1 ]
机构：
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
来源：
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2019年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power optoelectronic memory device is demonstrated by charge trapping in a MoS2/BN/graphene van der Waals heterostructure. The miniaturized structure, large current switching ratio (similar to 6x10(5)) and fast read/write speed (50 ms) suggest its potential in integrated non-volatile storage cell. (C) 2019 The Author(s)
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页数：2
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