Delineation of defect structures in flux-grown GdFeO3 crystals by etching

被引:5
|
作者
Kachroo, SK
Bamzai, KK
Dhar, PR
Kotru, PN
Wanklyn, BM
机构
[1] Univ Jammu, Dept Phys, Jammu 180004, India
[2] Univ Oxford, Clarendon Lab, Dept Phys, Oxford OX1 3PU, England
关键词
delineation; flux-grown; GdFeO3; crystals;
D O I
10.1016/S0169-4332(99)00491-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Etch patterns on (<(11)over bar 0>) and (001) faces of as-obtained GdFeO3 crystals are illustrated and described. Rectangular etch pits oriented with their longer sides in [100] direction and shorter sides in [010] direction are exhibited by [001] faces, whereas almost circular etch pits are exhibited by (<(11)over bar 0>) faces of as-obtained crystals. Hexagonal etch pits and triangular etch pits produced as a result of etching in boiling HNO3 on (001) and (<(11)over bar 0>) faces are respectively illustrated. Evidence in support of twinning in some crystals is offered. The etch pattern on as-grown crystals are attributed to some fault in their growth conditions. Edge nucleated growth pyramids on a (<(11)over bar 0>) face and conical hillocks on (001) faces exhibiting pits at the centres of their initiation are illustrated. The conical hillocks are suggested to be as a result of preferential growth at the point of emergence of screw dislocations. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:149 / 154
页数:6
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