Selective-Area Growth of III-Nitride Core-Shell Nanowalls for Light-Emitting and Laser Diodes

被引：0
|
作者：
Rishinaramangalam, Ashwin K. [1 ]
Fairchild, Michael N. [1 ]
Ul Masabih, Saadat M. [1 ]
Shima, Darryl M. [1 ]
Balakrishnan, Ganesh [1 ]
Feezell, Daniel F. [1 ]
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate selective-area growth of patterned III-nitride core-shell nanowalls with nonpolar InGaN quantum well shells over large areas. Transmission electron microscopy and photoluminescence are utilized to examine the growth morphology and emission characteristics.
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页数：2
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