III-nitride ultraviolet light-emitting diodes with delta doping

被引：58
|
作者：
Kim, KH [1 ]
Li, J [1 ]
Jin, SX [1 ]
Lin, JY [1 ]
Jiang, HX [1 ]
机构：
[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 03期
关键词：
D O I：
10.1063/1.1593212
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the results on the fabrication and characterization of 340 nm UV light-emitting diodes (LEDs) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition. By employing delta doping in the n- and p-type layers, we have demonstrated enhanced LED structural quality and emission efficiency. Combining with our interconnected microdisk LED architecture, the output power of a 300x300 mum(2) bare LED chip measured from the sapphire side reached 50 muW under a standard dc operation condition (20 mA) at 4.6 V and 1.6 mW under a pulsed driving current. (C) 2003 American Institute of Physics.
引用
收藏
页码：566 / 568
页数：3
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