341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

Hydride vapor-phase epitaxy (HVPE) was used to grow aluminum gallium nitride-based p-n diode structures on sapphire (0001) substrates. In the diode structure, an n-type AlGaN photon-emitting layer was sandwiched between n-type and p-type AlGaN cladding layers that contained higher AlN concentrations. These diode structures were processed and subsequently packaged into transistor outline cans. The light-emitting diodes (LEDs) were characterized using a state-of-the-art spectroradiometer. LED spectral emission occurred at a peak wavelength of 341 nm with a typical full width at half-maximum of approximately 14 nm. Pulsed injection currents of 110 mA resulted in greater than 2 mW of optical output power at a wavelength of 341 nm. This HVPE-grown LED's pulsed optical power output level is comparable to reported results on similar sized metalorganic chemical vapor deposition grown ultraviolet LEDs with emission wavelengths near 340 nm. (C) 2004 American Institute of Physics.