High Energy Limit of the Size-Tunable Photoluminescence of Hydrogen-Terminated Porous Silicon Nanostructures in HF

被引:0
|
作者
Gelloz, B. [1 ]
Takura, N. [2 ]
Sakata, S. [2 ]
Jin, L. [2 ]
机构
[1] Nagoya Univ, Grad Sch Sci, Furo Cho,Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Univ Yamanashi, Integrated Grad Sch Med Engn & Agr Sci, Kofu, Yamanashi 4008511, Japan
关键词
IN-SITU PHOTOLUMINESCENCE; QUANTUM DOTS; LUMINESCENCE; NANOCRYSTALS; WAVELENGTH; EFFICIENCY;
D O I
10.1149/2162-8777/ac7002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The photoluminescence (PL) of various porous silicon (PSi) layers was studied during chemical dissolution in HF. The relative PL quantum efficiency of some layers was also monitored. Typically, the PL increased, reached a maximum and then dropped down to complete extinction, accompanied with a PL blueshift. During PL fall, both the PL intensity and layer quantum efficiency fell sharply, accompanied by a decrease in full width at half maximum and a slowing blueshift. In the final stage, the PL intensity decreased without any further blueshift, the saturated PL peak wavelength being similar to 515 nm (similar to 2.4 eV) for most layers, identifying a high energy limit for the achievable PL of hydrogen-terminated Si nanostructures. Our results show that sudden catastrophic mechanical failure of nanostructure cannot explain the sharp PL drop and saturation of PL blueshift. Rather, they support the idea of a critical size (similar to 1.5-2 nm) below which the PL quantum efficiency vanishes. The possible reasons were discussed, privileging the emergence of structural non-radiative defects below a certain size, though the decreasing intrinsic quantum efficiency of Si nanocrystals with decreasing size could also play an important role. Maximum PL intensity was generally obtained for a peak wavelength of similar to 565 nm (similar to 2.2 eV).
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页数:7
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