Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon

被引：9
|
作者：
Torchynska, T. V. [1 ]
机构：
[1] ESFM Natl Polytech Inst, Mexico City 07738, DF, Mexico
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 45卷 / 4-5期
关键词：
Silicon nanocrystals; Amorphous silicon nanoclusters; XRD; Photoluminescence; HW-CVD; POROUS SILICON; PHOTOLUMINESCENCE; LUMINESCENCE; NANOCRYSTALLITES; FILMS;
D O I：
10.1016/j.spmi.2008.10.005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper presents the results of PL spectrum studies for Si nanoclusters in an amorphous silicon matrix. The four amorphous Si layers were prepared by the hot-wire CVD method on glass substrates at a temperature of 250 degrees C and different filament temperatures in the range of 1650-1950 degrees C. The joint analysis of PL and X ray diffraction results dependant on technological conditions has been done. PL bands deal with Si nanocrystals and amorphous Si nanoclusters are discussed as well. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：267 / 270
页数：4
相关论文
共 50 条
  • [21] SI-29 NUCLEAR-MAGNETIC-RESONANCE OF AMORPHOUS HYDROGENATED SILICON AND AMORPHOUS MICROCRYSTALLINE MIXED-PHASE HYDROGENATED SILICON
    HAYASHI, S
    HAYAMIZU, K
    YAMASAKI, S
    MATSUDA, A
    TANAKA, K
    PHYSICAL REVIEW B, 1987, 35 (10): : 4581 - 4590
  • [22] Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)
    Undalov, Yu. K.
    Terukov, E. I.
    SEMICONDUCTORS, 2015, 49 (07) : 867 - 878
  • [23] Methodological problems in the calculations on amorphous hydrogenated silicon, a-Si:H
    Sax, AF
    Krüger, T
    COMPUTATIONAL SCIENCE-ICCS 2002, PT III, PROCEEDINGS, 2002, 2331 : 950 - 955
  • [24] Mechanical properties of hydrogenated amorphous silicon (a-Si:H) particles
    Jiang, Taizhi
    Khabaz, Fardin
    Marne, Aniket
    Wu, Chenglin
    Gearba, Raluca
    Bodepudi, Revanth
    Bonnecaze, Roger T.
    Liechti, Kenneth M.
    Korgel, Brian A.
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (20)
  • [25] Photoelectrochemical Behaviour of Hydrogenated Amorphous Silicon(a-Si:H) Films
    Wang, B.-H.
    Wang, D.-J.
    Zhang, L.-H.
    Geng, X.-H.
    Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities, 1600, 16 (11-SUP):
  • [26] MOBILITY LIFETIME ESTIMATES IN AMORPHOUS HYDROGENATED SILICON (A-SI-H)
    SCHIFF, EA
    PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (02) : 87 - 92
  • [27] Photoelectrochemical behaviour of hydrogenated amorphous silicon (a-Si:H) films
    Wang, BH
    Wang, DJ
    Zhang, LH
    Geng, XH
    Sun, ZL
    Geng, XH
    Sun, ZL
    Li, TJ
    CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 1995, 16 (11): : 172 - 176
  • [28] MEMORY SWITCHING IN SPUTTERED HYDROGENATED AMORPHOUS SILICON (a-Si:H).
    Gangopadhyay, Shubhra
    Geiger, Juergen
    Schroeder, Bernd
    Ruebel, Herbert
    Iselborn, Stefan
    1600, (24):
  • [29] Photoelectrochemical behaviour of hydrogenated amorphous silicon(a-Si: H) films
    Wang, Bao-hui
    Wang, De-jun
    Zhang, Li-hua
    Geng, Xin-hua
    Sun, Zhong-lin
    Geng, Xin-hua
    Sun, Zhong-lin
    Li, Tie-jin
    Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities, 1995, 16 (11 suppl):
  • [30] Thermal emission of hydrogenated amorphous silicon microspheres in the mid-infrared
    Fenollosa, Roberto
    Ramiro-Manzano, Fernando
    INTERNATIONAL JOURNAL OF THERMAL SCIENCES, 2025, 213
12345