Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance

被引：0

作者：

Zhang, Xiufang ^{[1
,2
]}

Ma, Chenyue ^{[2
]}

Zhao, Wei ^{[2
]}

Zhang, Chenfei ^{[3
]}

Wang, Guozeng ^{[2
]}

Wu, Wen ^{[2
]}

Wang, Wenping ^{[2
]}

Cao, Yu ^{[2
]}

Yang, Shengqi ^{[4
]}

Yang, Zhang ^{[2
]}

Ma, Yong ^{[2
]}

Ye, Yun ^{[2
]}

Li, Yongliang ^{[2
]}

Wang, Ruonan ^{[2
]}

He, Jin ^{[1
,2
,3
]}

机构：

[1] Peking Univ, Key Lab Integrated Microsyst, Sch Comp & Informat Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

[2] Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China

[3] Peking Univ, Inst Microelect, TSRC, Beijing 100871, Peoples R China

[4] Shanghai Univ, Commun & Informat Engn Sch, Shanghai 200072, Peoples R China

来源：

NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.

引用

页码：172 / 175

页数：4

共 43 条

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