Minimal test for coupling faults in word-oriented memories

被引：5
|
作者：
van de Goor, AJ [1 ]
Abadir, MS [1 ]
Carlin, A [1 ]
机构：
[1] Delft Univ Technol, Dept Informat Technol & Syst, Sect Comp Engn, NL-2628 CD Delft, Netherlands
来源：
DESIGN, AUTOMATION AND TEST IN EUROPE CONFERENCE AND EXHIBITION, 2002 PROCEEDINGS | 2002年
关键词：
State coupling faults; word-oriented memories; tests; data backgrounds; m-out-of-n codes;
D O I：
10.1109/DATE.2002.998413
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Most industrial memories have an external word-width of more than one bit. However, most published memory test algorithms assume 1-bit memories; they will not detect coupling faults between the cells of a word. This paper improves upon the state of the art in testing word-oriented memories by presenting a new method for detecting state coupling faults between cells of the same word, based on the use of m-out-of-n codes. The result is a reduction in test time, which varies between 20 and 38%.
引用
收藏
页码：944 / 948
页数：5
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