Constant temperature LEC growth of InGaAs ternary bulk crystals using the double crucible method

被引：37
|
作者：
Nakajima, K
Kusunoki, T
机构：
[1] Fujitsu Laboratories Ltd., Atsugi 243-01
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 169卷 / 02期
关键词：
D O I：
10.1016/S0022-0248(96)00379-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A double crucible method was developed to improve the controllability of the supply of GaAs source element to the growth melt close to the growing interface for the liquid encapsulated Czochralski (LEG) technique. The double crucible has growth melt and source melt zones which are separated by a cylindrical wall with a slit. The GaAs solute element is controllably supplied from the source melt zone. The GaAs constituent is supplied to the source melt by immersing a GaAs source rod in the source melt zone. An In0.07Ga0.93As uniform crystal can be successfully grown using this method. The length and diameter of the crystal are about 5 and 1.5 cm, respectively.
引用
收藏
页码：217 / 222
页数：6
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