Growth of InGaAs ternary bulk crystals by rotational Bridgman method

被引：8

作者：

Hayakawa, Y. ^{[1
]}

Ozawa, T. ^{[2
]}

Araki, T. ^{[1
]}

Haris, M. ^{[1
]}

Kumagawa, M. ^{[1
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

[2] Shizuoka Inst Sci & Technol, Fukuroi 4378555, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Convection; Bridgman technique; Gallium compounds; Semiconducting ternary compounds;

D O I：

10.1016/j.jcrysgro.2004.11.013

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InxGa1-xAs (x = 0.02-0.03) ternary alloy bulk crystals were grown on a GaAs (001) seed by the rotational Bridgman method. To investigate the effect of ampoule-moving rate and the rotation rate on the growth rate, impurity striations were intentionally formed in the crystals by introducing thermal pulses at constant period during growth. Even if the ampoule-moving rate was constant, the growth rate was not constant. It gradually increased and approached the value of the moving rate. The ampoule rotation rate also affected the growth rate, but the Indium composition profile was insensitive to the change of growth rate. (C) 2004 Elsevier B. V. All rights reserved.

引用

页码：E421 / E425

页数：5

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