Hysteresis-Free Carbon Nanotube Field Effect Transistors Without Any Post-Treatment

被引：1

作者：

Wang, Chuan ^{[1
]}

Fu, Yunyi ^{[1
]}

Guo, Ao ^{[1
]}

Liu, Jia ^{[1
]}

Guan, Lunhui ^{[2
]}

Shi, Zujin ^{[2
]}

Gu, Zhennan ^{[2
]}

Huang, Ru ^{[1
]}

Zhang, Xing ^{[1
]}

机构：

[1] Peking Univ, Dept Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 9卷 / 02期

关键词：

Carbon Nanotube; CNTFET Hysteresis; Interface Traps; MEMORY; DEVICES; GATE;

D O I：

10.1166/jnn.2009.C073

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Out of hundreds of as-fabricated back-gated carbon nanotube field effect transistors we made, five devices which exhibit indiscernible hysteresis are found. The cause of these hysteresis-free devices is investigated based on the energy band and interface trap theory, and it is attributed to the bundling effect of single-walled carbon nanotubes which will result in a reduced bandgap in the single-walled carbon nanotube bundle compared with an isolated semiconducting carbon nanotube. A specific requirement of the SWNT bundle to satisfy the presumed explanation is also proposed.

引用

页码：1004 / 1007

页数：4

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