Field analysis (full-wave) of millimeter-wave HEMTs

被引：2
|
作者：
Ghiamy, M [1 ]
Abdipour, A [1 ]
Moeeni, R [1 ]
机构：
[1] Amirkabir Univ Technol, Tehran Polytech, Dept Elect Engn, Tehran, Iran
来源：
2001 MICROWAVE ELECTRONICS: MEASUREMENTS, IDENTIFICATION, APPLICATION, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/MEMIA.2001.982335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper an efficient method for full-wave analysis of millimeter-wave HEMTs is presented. The effect of wave propagation on transistor's structure is considered using Finite Difference Time Domain (FDTD) Method (Full-wave analysis). The active properties of transistor are studied using a small signal current density coupled to maxwell's equations. This method provides simulation time reduction and can be applied to the next generation of simulators for Simultaneous Electromagnetic-Electronic Modelling of mm-wave devices.
引用
收藏
页码：121 / 126
页数：6
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