Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis

被引：0
|
作者：
Karisan, Yasir [1 ]
Caglayan, Cosan [1 ]
Trichopoulos, Georgios C. [1 ]
Sertel, Kubilay [1 ]
机构：
[1] Ohio State Univ, Electrosci Lab, 1330 Kinnear Rd, Columbus, OH 43212 USA
来源：
2015 COMPUTATIONAL ELECTROMAGNETICS INTERNATIONAL WORKSHOP (CEM'15) | 2015年
关键词：
DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, and the computed response of the proposed model up to 325 GHz. For the first time, we develop a systematic parameter extraction algorithm for differential device configurations.
引用
收藏
页码：48 / 49
页数：2
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