Radiation dosimeters for high dose by commercial PMOS transistors using normalized drain current as dosimetric parameter

被引：0

作者：

ChangLiao, KS

Wu, TL

机构：

[1] Department of Nuclear Engineering and Engineering Physics, National Tsing Hua University, Kawasaki, Taiwan

来源：

JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY | 1997年 / 34卷 / 10期

关键词：

radiation dosimeters; radiation doses; metal oxide semiconductor; PMOS transistors; field effect transistors; commercial device; dosimetric parameters; drain current; threshold voltage; sensitivity;

D O I：

10.1080/18811248.1997.9733775

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

A PMOS transistor that is commercially available device can function as a practical radiation dosimeter for high dose. A new dosimetric parameter, that is shift rate of drain current, is proposed and demonstrated to reduce the possible errors of measurement. The calibration curve of dosimetric parameter vs. radiation dose shows a very linear characteristic. Some modifications were suggested to compensate the room temperature effects. The gate bias can be applied to further increase the dosimetric sensitivity and extend the dose of radiation measurement to a lower range.

引用

页码：992 / 995

页数：4

共 14 条

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