Room-temperature ferromagnetism induced by Cu vacancies in Cux(Cu2O)1-x granular films

被引:0
|
作者
Xie Xin-Jian [1 ]
Li Hao-Bo [2 ,3 ]
Wang Wei-Chao [2 ,3 ]
Lu Feng [2 ,3 ]
Yu Hong-Yun [4 ]
Wang Wei-Hua [2 ,3 ]
Cheng Ya-Hui [2 ,3 ]
Zheng Rong-Kun [5 ]
Liu Hui [2 ,3 ]
机构
[1] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China
[2] Nankai Univ, Dept Elect, Tianjin 300071, Peoples R China
[3] Nankai Univ, Tianjin Key Lab Photoelect Thin Film Device & Te, Tianjin 300071, Peoples R China
[4] Tsinghua Univ, Sch Mat Sci & Engn, Ctr Testing & Analyzing Mat, Beijing 100084, Peoples R China
[5] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia
基金
中国国家自然科学基金;
关键词
Cu-x(Cu2O)(1-x) granular films; room-temperature ferromagnetism; oxide diluted magnetic semiconductors;
D O I
10.1088/1674-1056/24/9/097504
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Cu-x(Cu2O)(1-x) (0.09 6 <= x <= 1.00) granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cu-x(Cu2O)(1-x) deposition. Room- temperature ferromagnetism ( FM) is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cu-x(Cu2O)(1-x) granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.
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页数:5
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