Low-temperature transport properties of individual SnO2 nanowires

被引：88
|
作者：
Ma, YJ
Zhou, F
Lu, L
Zhang, Z
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Key Lab Extreme Condit Phys, Beijing 100080, Peoples R China
[3] Beijing Univ Technol, Beijing 100022, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 05期
关键词：
SnO2; nanowires; conductivity; Efros-Shklovskii variable-range hopping;
D O I：
10.1016/j.ssc.2004.02.013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Stannic oxide (SOn(2)) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO2 nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation InR similar to T-1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：313 / 316
页数：4
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