High-quality Schottky contacts to n-InGaN alloys prepared for photovoltaic devices

被引：19

作者：

Chen, D. J. ^{[1
]}

Huang, Y. ^{[1
]}

Liu, B. ^{[1
]}

Xie, Z. L. ^{[1
]}

Zhang, R. ^{[1
]}

Zheng, Y. D. ^{[1
]}

Wei, Y. ^{[2
]}

Narayanamurti, V. ^{[2
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing Natl Lab Microstruct, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[2] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 06期

基金：

中国国家自然科学基金;

关键词：

carrier density; electron traps; gallium compounds; gold; hole traps; III-V semiconductors; indium compounds; photovoltaic cells; platinum; Schottky barriers; Schottky diodes; semiconductor-metal boundaries; thermionic ion emission; tunnelling; wide band gap semiconductors; GAN; DEFECTS; GALLIUM; DIODES; LAYER;

D O I：

10.1063/1.3099601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large-area Au/Pt/n-In(0.2)Ga(0.8)N Schottky contacts have been fabricated for photovoltaic devices. The current transport mechanisms of the Schottky contacts to n-In(0.2)Ga(0.8)N with different background carrier concentrations are investigated. The thermionic emission is a dominating current transport mechanism at the Pt/n-InGaN interface in a low background carrier concentration sample, while the defect-assisted tunneling current and trap-related recombination current play important roles in high background carrier concentration samples. The Schottky diode fabricated using the low background carrier concentration sample gives much better Schottky barrier characteristics and exhibits a three to four order of magnitude higher spectral responsivity and a larger rejection ratio in comparison with those fabricated using the high background carrier concentration samples.

引用

页数：4

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