The efficiency of formation of primary radiation defects in LiF and MgF2 crystals

被引：7
|
作者：
Lisitsyna, LA [1 ]
Lisitsyn, VM
Korepanov, VI
Grechkina, TV
机构：
[1] Tomsk State Architecture & Construct Univ, Tomsk 634003, Russia
[2] Tomsk Polytech Univ, Tomsk 634034, Russia
来源：
OPTICS AND SPECTROSCOPY | 2004年 / 96卷 / 02期
关键词：
D O I：
10.1134/1.1651248
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Processes of radiation formation of primary defects-F centers and self-trapped excitons-in lithium and magnesium fluorides, which have crystal lattices of different types and similar widths of the band gap and valence band, have been studied in a wide temperature range (11-500 K). It is shown that, along with qualitative similarity of the regularities of formation of the defects under study, LiF and MgF2 crystals are characterized at low temperatures (11-100 K) by different relationships between the energy dissipation channels for self-trapping electronic excitations and the types of self-trapped excitons arising. (C) 2004 MAIK "Nauka/Interperiodica".
引用
收藏
页码：230 / 234
页数：5
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