Modeling of the heterostructure field-effect transistor with quantum dots

被引：0
|
作者：
Timofeyev, V., I [1 ]
Faleyeva, E. M. [1 ]
机构：
[1] Natl Tech Univ Ukraine, KPI, 37 Pobedy Ave, UA-03056 Kiev, Ukraine
来源：
2006 16TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY, VOLS 1 AND 2, CONFERENCE PROCEEDINGS | 2006年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characteristics of the heterostructure transistor with quantum dots (QD) on the grounds of two-dimensional numerical model are presented.
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收藏
页码：222 / +
页数：2
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